ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 1 description ace 4 0 1 0 m uses advanced trench technology to provide excellent r ds(on) . this device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, dc/dc converter. features ? l ow r ds(on) trench technolog y ? low thermal impedance ? fast switching spee d applications: ? p o e p o w e r s ourc i n g e q u ip m ent ? p o e p o w e red de v ices ? t e lec o m d c /dc conv e rters ? w hite l e d b o o st co n v ert e r s absolute maximum ratings parameter symbol limit unit drain - source voltage v ds 100 v gate - source voltage v gs 20 continuous drain current t c = 2 5 c i d 26 a pulsed drain current b i dm 50 continuous source current (diode conduction) i s 50 a power dissipation t c = 2 5 c p d 50 w operating junction and storage temperatu re range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol maximum unit m a x i m um ju n c t i o n - to - a m b i e n t a r ja 40 c/w m a x i m um ju n c t i o n - to - ca se r j c 3 notes a. surface mounted on 1? x 1? fr4 board, drain pad using 2 oz copper, valu e dependent on pc board thermal characteristics . b. pulse width limited by maximum junction temperature .
ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 2 packaging type to - 252 g d s ordering information ace 4010 m ym + h ym : to - 252 pb - free halogen - free
ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 3 electrical characteristics t a =25 , unless otherwise specified. parameter symbol conditions min. typ. max. unit static g at e - s o u rc e t hre s h ol d v o l ta g e v g s(t h) v ds = v gs , i d = 2 5 0 u a 1 3.5 v g at e - b o d y l e a k a g e i gs s v ds = 0 v , v gs = 20 v 100 na zero g ate v o l ta g e dra i n c u rre n t i dss v ds = 8 0 v , v gs = 0 v 1 ua v ds = 80 v , v gs = 0 v , t j = 5 5 c 25 o n - st a te d r a i n c u rr e n t i d(on ) v ds = 5 v , v gs = 10 v 34 a d r a i n - s o ur c e on - re s i s ta n c e r ds (on ) v gs = 10 v , i d = 1 0 a 36 m v gs = 4 . 5 v , i d = 9.2 a 4 2 for w ard t r a n sco n d u c ta n c e g fs v ds = 15 v , i d = 10 a 10 s d i o d e for w ard v o l ta g e v sd i s = 2 5 a , v gs = 0 v 0. 8 9 v dynamic t ot a l g ate ch a r ge q g v ds = 5 0 v , v gs = 4 . 5 v , i d = 1 0 a 14.8 nc g at e - s o u rc e c h arge q gs 4. 3 g at e - d r a i n c h arge q gd 8.6 t urn - o n d el ay t i m e t d(on ) v dd = 5 0 v , r l = 5 , i d = 1 0 a , v gen = 10 v , r g en = 6 4.8 n s r i s e t i m e t r 14.2 t urn - o f f de l ay t i m e t d(o ff ) 39.2 fa l l t i m e t f 25.6 in p ut cap a c i ta n c e c iss v ds = 15 v , v gs = 0 v , f = 1 m hz 1216 pf o ut p ut cap a c i ta n c e c oss 154 re v er s e t r a n s f er capac i ta n c e c rss 131 note: a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing.
ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 4 typical performance characteristics (n - cha nnel) id - drain current (a) vgs - gate - to - source voltage (v) 1. on - resistance vs. drain current 2. transfer characteristics vgs - gat e - to - source voltage (v) vsd - source - to - drain voltage (v) 3. on - resistance vs. gate - to - source voltage 4. drain - to - source forward voltage vds - drain - to - source voltage (v) vds - drain - to - sourc e voltage (v) 5. output characteristics 6. capacitance
ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 5 typical performance characteristics qg - total gate charge (nc) tj ? junction temperature(c) 7. gate charge 8. normalized on - resistance vs junction temperature vds drain to source voltage (v) t1 time (sec) 9. safe operating area 10. single pulse maximum power dissipation t1 time (sec) 11. normalized thermal transient junction to ambient
ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 6 packing information to - 252 symbol dimensional reqmts min nom max e 6.40 6.60 6.731 l 1.40 1.52 1.77 l1 2.743 ref l2 0.508 bsc l3 0.89 1.27 l4 06.4 1.01 l5 d 6.00 6.10 6.223 h 9.40 10.00 10.40 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b 3 5.21 5.34 5.46 e 2.286 bsc a 2.20 2.30 2.38 a1 0 0.127 c 0.45 0.50 0.60 c2 0.45 0.50 0.58 d1 5.30 e1 4.40 0 10
ace 4 0 1 0 m n - channel 100 -v mosfet ver 1. 1 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace ele ctronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instruc tions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the fail ure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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